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| Previous Datasheet Index Next Data Sheet PD - 9.1022 IRGPC20F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) 2.8V @VGE = 15V, I C = 9.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 16 9.0 64 64 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 2.1 -- 40 -- Units C/W g (oz) Revision 0 C-69 To Order Previous Datasheet Index Next Data Sheet IRGPC20F Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.72 -- V/C VGE = 0V, I C = 1.0mA -- 2.0 2.8 IC = 9.0A V GE = 15V -- 2.6 -- V IC = 16A See Fig. 2, 5 -- 2.3 -- IC = 9.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.9 5.1 -- S VCE = 100V, I C = 9.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 16 21 IC = 9.0A 2.4 3.4 nC VCC = 400V See Fig. 8 7.9 10 VGE = 15V 24 -- TJ = 25C 13 -- ns IC = 9.0A, V CC = 480V 160 270 VGE = 15V, R G = 50 310 600 Energy losses include "tail" 0.18 -- 0.90 -- mJ See Fig. 9, 10, 11, 14 1.08 2.0 25 -- TJ = 150C, 18 -- ns IC = 9.0A, V CC = 480V 210 -- VGE = 15V, R G = 50 600 -- Energy losses include "tail" 1.65 -- mJ See Fig. 10, 14 13 -- nH Measured 5mm from package 340 -- VGE = 0V 63 -- pF VCC = 30V See Fig. 7 5.9 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-70 To Order Previous Datasheet Index Next Data Sheet IRGPC20F 25 F o r b o th : T r ia ng ular w av e : 20 L O A D C U R R E N T (A ) D uty c yc le: 50% T J = 125 C T s in k = 90C G ate d riv e as s pec ified P o w e r D is s ip a tio n = 1 5 W C la m p v o lta g e : 8 0 % o f ra te d 15 S quare w av e: 6 0 % o f ra te d vo lta g e 10 5 Id e a l d io d e s 0 0.01 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 I C , C ollector-to-E mitte r C urren t (A ) TJ = 25 C TJ = 25 C TJ = 1 50 C I C , C ollector-to-E mitter C urrent (A ) TJ = 1 50 C 10 10 1 0.1 0.1 1 V G E = 15 V 2 0 s P U L S E W ID TH 10 1 5 10 V C C = 1 00 V 5 s P UL S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate-to-E m itter V olta g e (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-71 To Order Previous Datasheet Index Next Data Sheet IRGPC20F 16 VC E , C o lle ctor-to-E m itter V oltage (V ) V G E = 15 V 4.0 Ma xim um D C C ollecto r C urren t (A ) VG E = 1 5 V 80 s P UL S E W ID TH I C = 18 A 3.5 12 3.0 8 2.5 I C = 9.0 A 2.0 4 I C = 4.5A 1.5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 Voltage - Collector-to-Emitter vs. Case Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 0 .0 5 PD M 0.1 0 .0 2 0 .0 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-72 To Order Previous Datasheet Index Next Data Sheet IRGPC20F 700 V G E , G ate-to-E m itte r V o ltag e (V ) 600 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0V I C = 9.0 A 16 C, C apacitance (pF) 500 Cies Coes 400 12 300 8 200 Cres 4 100 0 1 10 100 0 0 4 8 12 16 20 V C E , C o llector-to-Em itter V oltage (V) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1 .3 6 10 To ta l S w itch in g Losses (m J) 1 .3 4 To ta l S w itc hing Lo sse s (m J) VC C VG E TC IC = 48 0 V = 15 V = 25 C = 9.0A R G = 50 V GE = 15 V V CC = 48 0 V I C = 1 8A I C = 9.0A 1 .3 2 1 .3 0 1 I C = 4.5 A 1 .2 8 1 .2 6 1 .2 4 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R esistance ( ) W TC , C ase Tem peratu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-73 To Order Previous Datasheet Index Next Data Sheet IRGPC20F 4.0 3.0 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total S w itching Losses (m J) RG TC V CC VGE = 50 = 150 C = 4 80 V = 15 V 100 VG E E 20 V G= T J = 125 C S A FE O P E R A TIN G A R E A 10 2.0 1.0 0.0 4 8 12 16 20 1 1 10 100 1000 I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-74 To Order |
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